JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 1.2 W
Tamb=25
Collector current
I
CM
: 0.2 A
Collector-base voltage
V
(BR)CBO
: 600 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
600
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 1 mA , I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
7
V
Collector cut-off current
I
CBO
V
CB
= 600 V , I
E
=0
100
A
Collector cut-off current
I
CEO
V
CE
= 400 V , I
B
=0
200
A
Emitter cut-off current
I
EBO
V
EB
= 7 V , I
C
=0
100
A
h
FE
1
V
CE
= 20 V, I
C
= 20mA
10
40
DC current gain
h
FE
2
V
CE
= 10V, I
C
= 0.25 mA
5
Collector-emitter saturation voltage
V
CE
(sat)
I
C
= 50mA, I
B
= 10 mA
0.5
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
= 50 mA, I
B
= 10mA
1.2
V
Base-emitter voltage
V
BE
I
E
= 100 mA,
1.1
V
Transition frequency
f
T
V
CE
= 20 V, I
C
=20mA
f =
1MHz
8
MHz
Fall time
t
f
0.3
s
Storage time
t
S
I
C
=50mA,
I
B1
=-I
B2
=5mA,
V
CC
=45V
1.5
s
CLASSIFICATION OF h
FE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
1 2 3
TO
--
251
1.BASE
2.COLLECTOR
3.EMITTER
D
A
A1
C1
C
E
B
L
D1
b
b1
e
e1
TO-251 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
B
b
b1
c
c1
D
D1
E
e
e1
L
Min
2.200
1.020
1.350
0.500
0.700
0.430
0.430
6.350
5.200
5.400
4.500
7.500
Max
2.400
1.270
1.650
0.700
0.900
0.580
0.580
6.650
5.400
5.700
4.700
7.900
Min
0.087
0.040
0.053
0.020
0.028
0.017
0.017
0.250
0.205
0.213
0.177
0.295
Max
0.094
0.050
0.065
0.028
0.035
0.023
0.023
0.262
0.213
0.224
0.185
0.311
Dimensions In Millimeters
Dimensions In Inches
0.091TYP
2.300TYP
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